Unipolar injection currents in Bi₄Ge₃O₁₂ crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Unipolar injection currents in Bi₄Ge₃O₁₂ crystals
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| Creator |
Bochkova, T.M.
Plyaka, S.N. Sokolyanskii, G.Ch. |
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| Description |
Current-voltage characteristics of bismuth orthogermanate (Bi₄Ge₃O₁₂) single crystals have been measured at different temperatures under conditions of unipolar injection of charge carriers. It has been found that conduction is characterized by the existence of two channels of the percolation. The temperature dependencies of the conductivity, mobility and concentration of the electrons and holes are considered. The obtained results are discussed in terms of hopping transport model of charge carriers in doped heavily compensated semiconductors.
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| Date |
2017-05-28T16:34:17Z
2017-05-28T16:34:17Z 2003 |
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| Type |
Article
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| Identifier |
Unipolar injection currents in Bi₄Ge₃O₁₂ crystals / T.M. Bochkova, S.N. Plyaka, G.Ch. Sokolyanskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 461-464. — Бібліогр.: 23 назв. — англ.
1560-8034 PACS: 72.20 Iv http://dspace.nbuv.gov.ua/handle/123456789/118075 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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