On the problem of relaxation for radiation-induced optical effects in some ternary chalcogenide glasses
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
On the problem of relaxation for radiation-induced optical effects in some ternary chalcogenide glasses
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| Creator |
Shpotyuk, O.I.
Vakiv, M.M. Butkiewicz, B. Kovalskiy, A.P. Golovchak, R.Ya. |
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| Description |
We have investigated the influence of high-energy γ-irradiation on the optical transmission spectra of ternary Ge-As-S chalcogenide glasses of the stoichiometric As₂S₃-GeS₂ and non-stoichiometric As₂S₃-Ge₂S₃ systems. A long-wave shift of the fundamental absorption edge is observed for all glasses. Two different components of radiation-induced changes were specified: static (residual) and dynamic (time dependent) ones. The dynamic component is mathematically described by the exponential and power functions in respect to post-irradiation periods. It is shown that quantitative features of the observed self-restoration phenomena in the irradiated glasses are closely related to their chemical compositions and stoichiometry. |
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| Date |
2017-05-28T17:53:06Z
2017-05-28T17:53:06Z 2007 |
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| Type |
Article
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| Identifier |
On the problem of relaxation for radiation-induced optical effects in some ternary chalcogenide glasses / O.I. Shpotyuk, M.M. Vakiv, B. Butkiewicz, A.P. Kovalskiy, R.Ya. Golovchak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 23-27. — Бібліогр.: 17 назв. — англ.
1560-8034 PACS 61.80.-x http://dspace.nbuv.gov.ua/handle/123456789/118117 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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