Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region
|
|
| Creator |
Borblik, V.L.
Shwarts, Yu.M. Shwarts, M.M. |
|
| Description |
Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott temperature dependence of the forward current in a certain range of bias voltages and low temperatures have studied from the point of their use as temperature sensors. In the region of hopping conduction, the operating signal of diodes U (T) (U is a voltage drop across the diode during the passage of a constant current, T is the temperature) reproduces the Mott law (with opposite sign in the exponent), and the temperature sensitivity of such sensors after passing through a minimum (as the temperature is lowered) increases again up to the values typical of room temperature |
|
| Date |
2017-05-28T17:55:15Z
2017-05-28T17:55:15Z 2007 |
|
| Type |
Article
|
|
| Identifier |
Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 44-47. — Бібліогр.: 11 назв. — англ.
1560-8034 PACS 07.07.Df, 61.72.Tt, 72.20.-I, 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/118120 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|