Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence
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| Creator |
Savkina, R.K.
Smirnov, A.B. Sizov, F.F. |
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| Description |
We have carried out a systematic study of mercury cadmium telluride crystals subjected to the high-frequency and high-intensity ultrasonic influence. The charge carrier transport parameters were determined from the Hall coefficient and conductivity measurements. Temperature dependences of the electron concentration without and during the ultrasonic load were calculated. A good agreement between the experimental and theoretical data was obtained. A model of internal source of the infrared radiation associated with a dislocation is proposed for the explanation of sonically stimulated effects in the semiconductor system. We have considered a possibility of the thermooptical excitation in Hg₁₋xCdxTe alloys during sonication, which can result in the nonequilibrium charge carrier generation and changes in electrical parameters of the material. |
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| Date |
2017-05-28T17:58:14Z
2017-05-28T17:58:14Z 2007 |
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| Type |
Article
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| Identifier |
Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence / R.K. Savkina, A.B. Smirnov, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 61-64. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS 07.57.Hm, 43.35.+d, 61.72.Lk, 73.61.Ga, 73.50.Jt http://dspace.nbuv.gov.ua/handle/123456789/118124 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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