Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System
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| Creator |
Moskvin, P.P.
Rashkovetsky, L.V. Khodakovsky, V.V. |
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| Description |
By comparing the results of calculations concerning the dependence of the parameters of a layer on the growth conditions with and without regard for mechanical strains in the growing system, we have analyzed the influence of the elastic energy of the strained solid phase on the phase formation in the Cd–Hg–Te system. It is shown that the occurrence of elastic strains in a layer results in an insignificant reduction of the growth rate and has almost no influence on the composition of a growing layer. The ideas of coherently matched phases in the presence of elastic deformations in the system, as well as the assumption about the existence of the chemical equilibrium of phases on the interface, give rather close results as for the crystallization of the material. Both approaches describe the experimental data on the growth of layers in various temperature-time regimes quite satisfactorily |
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| Date |
2017-05-28T17:59:30Z
2017-05-28T17:59:30Z 2007 |
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| Type |
Article
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| Identifier |
Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System / P.P. Moskvin, L.V. Rashkovetsky, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 70-74. — Бібліогр.: 14 назв. — англ.
1560-8034 PACS 64.90.+b http://dspace.nbuv.gov.ua/handle/123456789/118126 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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