Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers
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| Creator |
Red’ko, R.
Red’ko, S. |
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| Description |
To study the influence of microwave irradiation on a spectrum of defect states in porous InP, we have measured the luminescence spectra within the range 0.50 to 2.04 eV at 77 K before and after short and long (up to 600 s) treatments in air in the operation chamber of a magnetron at a frequency of 2.45 GHz and a surface power density of 7.5 W/cm² . We have obtained that the spectra of defects in researched samples are essentially changed as well as the concentrations of local centers. Possible mechanisms of observable changes in the semiconductor impurity-defect composition caused by a microwave treatment are discussed. |
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| Date |
2017-05-28T18:00:07Z
2017-05-28T18:00:07Z 2007 |
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| Type |
Article
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| Identifier |
Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers / R. Red'ko, S. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 75-76. — Бібліогр.: 5 назв. — англ.
1560-8034 PACS 61.71.-y, 71.55.-I http://dspace.nbuv.gov.ua/handle/123456789/118127 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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