Compensation of hole conductivity in CdTe crystals doped with Cr
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Compensation of hole conductivity in CdTe crystals doped with Cr
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Creator |
Nikonyuk, E.S.
Zakharuk, Z.I. Kuchma, M.I. Kovalets, M.O. Rarenko, A.I. Yuriychuk, I.M. |
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Description |
We present the results of optical and electrophysical investigations of CdTe:Cr crystals. A model explaining a considerable shift of the fundamental absorbtion edge in the crystals into the long-wave region is proposed. It is found that the doping of cadmium telluride crystals with Cr impurity leads to the introduction of deep donors with Еv + 0.19…0.32 eV |
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Date |
2017-05-28T18:00:40Z
2017-05-28T18:00:40Z 2007 |
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Type |
Article
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Identifier |
Compensation of hole conductivity in CdTe crystals doped with Cr / E.S. Nikonyuk, Z.I. Zakharuk, M.I. Kuchma, M.O. Kovalets, A.I. Rarenko, I.M. Yuriychuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 77-79. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS 61.72.Vv, 71.55.-i http://dspace.nbuv.gov.ua/handle/123456789/118128 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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