Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation
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| Creator |
Moscal, D.S.
Fedorenko, L.L. Yusupov, M.M. Golodenko, M.M. |
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| Description |
We used the method of nets to calculate the thermoelastic stresses on the GaAs surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm) with diffraction spatial intensity modulation from a shield with rectangular cut. The structure of irradiated subsurface layers of samples was studied by the AFM method. A periodic islet structure formed in the process of diffusive redistribution of defects was revealed by the level-by-level chemical etching. |
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| Date |
2017-05-28T18:01:26Z
2017-05-28T18:01:26Z 2007 |
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| Type |
Article
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| Identifier |
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation / D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 80-83. — Бібліогр.: 14 назв. — англ.
1560-8034 PACS 71.10.-W http://dspace.nbuv.gov.ua/handle/123456789/118129 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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