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Thermofield Cr->Cr²⁺ recharging resulting in anomalous intensification of Cr²⁺ emission in ZnS:Cr thin-film electroluminescent structures

Vernadsky National Library of Ukraine

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Title Thermofield Cr->Cr²⁺ recharging resulting in anomalous intensification of Cr²⁺ emission in ZnS:Cr thin-film electroluminescent structures
 
Creator Vlasenko, N.A.
Oleksenko, P.F.
Denisova, Z.L.
Mukhlyo, M.A.
Veligura, L.I.
 
Description For the first time, an anomalous strong increase of the Cr²⁺ emission intensity
(I) with increasing the applied voltage (V) has been discovered in ZnS:Cr thin-film
electroluminescent structures (TFELS) instead of the I(V) dependence saturation typical
of TFELS of the MISIM type, where M is an electrode, I is an insulator layer and S is an
EL film. The dependence of I on the transferred charge (Q) is very superlinear, whereas
the luminance of the emission of hot electrons, which takes place simultaneously with the
Cr²⁺ emission, increases proportionally to Q as it happens usually in TFELS. The
increase of I and Q is accompanied by rising the sample temperature up to 30 – 50 °C.
However, the emission spectrum that is inherent to the ⁵E → ⁵T₂ transition in the 3d shell
of a Cr²⁺ ion is not changed in this case. The above effects are explained by Cr⁺ → Cr²⁺
thermofield recharging, which results in an increase of the number not only of free
electrons, but also of Cr²⁺ radiation centers. The most probable mechanism of such a
recharging is the Frenkel-Pool field-stimulated thermal ionization of Cr⁺
ions, whose ionization energy is 0.65…0.82 eV.
 
Date 2017-05-28T18:05:01Z
2017-05-28T18:05:01Z
2007
 
Type Article
 
Identifier Thermofield Cr->Cr²⁺ recharging resulting in anomalous intensification of Cr²⁺ emission in ZnS:Cr thin-film electroluminescent structures / N.A. Vlasenko, P.F. Oleksenko, Z.L. Denisova, M.A. Mukhlyo, L.I. Veligura // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 87-90. — Бібліогр.: 13 назв. — англ.
1560-8034
PACS 78.60.Fi, 73.50.Fq, 71.55.Gs, 68.55.L
http://dspace.nbuv.gov.ua/handle/123456789/118131
 
Language en
 
Relation Semiconductor Physics Quantum Electronics & Optoelectronics
 
Publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України