Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells
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| Creator |
Fodchuk, I.M.
Gevyk, V.B. Gimchinsky, O.G. Kislovskii, E.N. Kroytor, O.P. Molodkin, V.B. Olihovskii, S.I. Pavelescu, E.M. Pessa, M. |
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| Description |
The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties of such systems are considered. The content of nitrogen in quantum wells and buffer layers are defined. It is determined that InxGa₁₋xAs₁₋yNy system has perfect crystalline structure, and interface between layers is coherent.
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| Date |
2017-05-28T16:43:41Z
2017-05-28T16:43:41Z 2003 |
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| Type |
Article
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| Identifier |
Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells / I.M. Fodchuk, V.B. Gevyk, O.G. Gimchinsky, E.N. Kislovskii, O.P. Kroytor, V.B. Molodkin, S.I. Olihovskii, E.M. Pavelescu, M. Pessa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 479-486. — Бібліогр.: 23 назв. — англ.
1560-8034 PACS: 68.65.Fg http://dspace.nbuv.gov.ua/handle/123456789/118086 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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