A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures
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| Creator |
Sachenko, A.V.
Kryuchenko, Yu.V. Manoilov, E.G. Kaganovich, E.B. |
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| Description |
To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, which has to emerge in such structures due to indirect-bandgap nature of silicon material. The effect implies that the exciton radiative lifetime becomes a nonmonotonous (oscillating) function of the nanocrystal (NC) size. As a result, in the calculated PL spectra the energy distance between PL peaks or PL minima practically determined by the mean NC size, while dispersion in NC sizes plays a minor role. The qualitative agreement between calculated PL spectra and PL spectra observed experimentally in porous silicon and nanocrystalline silicon (nc-Si) films counts in favor of the used model of radiative exciton recombination. |
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| Date |
2017-05-28T16:44:15Z
2017-05-28T16:44:15Z 2003 |
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| Type |
Article
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| Identifier |
A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures / A.V. Sachenko, Yu.V. Kryuchenko, E.G. Manoilov, E.B. Kaganovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 487-491. — Бібліогр.: 6 назв. — англ.
1560-8034 PACS: 73.20.Dx, 78.66.-w http://dspace.nbuv.gov.ua/handle/123456789/118087 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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