Structure and luminescence study of nanoporous silicon layers with high internal surface
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Structure and luminescence study of nanoporous silicon layers with high internal surface
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| Creator |
Makara, V.A.
Melnichenko, M.M. Svezhentsova, K.V. Khomenkova, L.Yu. Shmyryeva, O.M. |
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| Description |
In this work, the technique of formation of homogeneous nanoporous silicon layers with high internal surface on solar cell substrates by stain etching is developed. Emission and structure properties of such layers were studied by photoluminescence (PL), photoluminescence excitation, Auger electronic spectroscopy, atomic force microscopy and scanning tunnel microscopy methods. It was observed that nanoporous layers are of high homogeneity and their thickness is ~20-25 nm. It was shown that the higher PL intensity of such layers in comparison with PL intensity of the layers prepared on standard substrates in the same regimes is connected with the higher internal surface. The increase of PL intensity during prolonged aging in air at the room temperature was observed.
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| Date |
2017-05-28T16:44:51Z
2017-05-28T16:44:51Z 2003 |
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| Type |
Article
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| Identifier |
Structure and luminescence study of nanoporous silicon layers with high internal surface / V.A. Makara, M.M. Melnichenko, K.V. Svezhentsova, L.Yu. Khomenkova, O.M. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 492-495. — Бібліогр.: 9 назв. — англ.
1560-8034 PACS: 78.55.Mb, 78.66.Bf http://dspace.nbuv.gov.ua/handle/123456789/118088 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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