Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure
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| Creator |
Aw, K.C.
Ibrahim, K. |
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| Description |
Spin-on Methylsilsesquioxane (MSQ) exhibits low dielectric constant and is an important and promising material to reduce parasitic capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ has lower film density and therefore more porous than the traditional silicon dioxide (SiO₂) film and could pose reliability issues. This paper is an extension to previous paper [1], which reported that evaporated copper (Cu) onto spin-on MSQ has high leakage current and provides two alternative models with the aid of energy band diagrams to describe the effect of evaporated Cu onto spin-on MSQ using Metal Oxide Semiconductor capacitor (MOSC) structure.
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| Date |
2017-05-28T17:11:37Z
2017-05-28T17:11:37Z 2003 |
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| Type |
Article
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| Identifier |
Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure / K.C. Aw, K. Ibrahim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 524-527. — Бібліогр.: 12 назв. — англ.
1560-8034 PACS: 42.55 Rz http://dspace.nbuv.gov.ua/handle/123456789/118103 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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