Configuration interaction in delta-doped heterostructures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Configuration interaction in delta-doped heterostructures
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| Creator |
Rozhansky, I.V.
Averkiev, N.S. Lähderanta, E. |
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| Subject |
XIX Уральская международная зимняя школа по физике полупроводников
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| Description |
We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in terms of Anderson–Fano model as configuration interaction between the carrier bound state at the impurity and the continuum of delocalized states in the QW. An effect of this interaction on the interband optical transitions in the QW is analyzed. The results are discussed regarding the series of experiments on the GaAs structures with a δ-Mn layer. |
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| Date |
2017-05-28T16:53:22Z
2017-05-28T16:53:22Z 2013 |
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| Type |
Article
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| Identifier |
Configuration interaction in delta-doped heterostructures / I.V. Rozhansky, N.S. Averkiev, E. Lähderanta // Физика низких температур. — 2013. — Т. 39, № 1. — С. 40–47. — Бібліогр.: 13 назв. — англ.
0132-6414 PACS: 75.75.–c, 78.55.Cr, 78.67.De http://dspace.nbuv.gov.ua/handle/123456789/118094 |
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| Language |
en
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| Relation |
Физика низких температур
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| Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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