Nucleation, growth and transformation of microdefects in FZ-Si
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Nucleation, growth and transformation of microdefects in FZ-Si
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| Creator |
Talanin, V.I.
Talanin, I.E. |
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| Description |
The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the process of microdefects formation in silicon proceeds simultaneously by two independent mechanisms: the vacancy and interstitial ones.
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| Date |
2017-05-28T17:30:23Z
2017-05-28T17:30:23Z 2004 |
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| Type |
Article
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| Identifier |
Nucleation, growth and transformation of microdefects in FZ-Si / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 16-21. — Бібліогр.: 50 назв. — англ.
1560-8034 PACS: 61.72.Bb; 61.72.Ji; 61.72.Yx http://dspace.nbuv.gov.ua/handle/123456789/118108 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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