The simple approach to determination of active diffused phosphorus density in silicon
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
The simple approach to determination of active diffused phosphorus density in silicon
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| Creator |
Sasani, M.
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| Description |
The diffusion of Phosphorus in silicon using a POCl₃ source has been considered. In the base of Fair-Tsai model of P-diffusion an empirical equation for calculation of active diffused phosphorus density (Qel), is proposed. In this equation, a relationship between (Qel), diffusion time, temperature and junction depth of P-diffused layer (Xj), is presented. The value of sheet resistance (Rs), which is taken from theoretical determination at 900°C, has a good agreement with experimental result.
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| Date |
2017-05-28T17:31:14Z
2017-05-28T17:31:14Z 2004 |
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| Type |
Article
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| Identifier |
The simple approach to determination of active diffused phosphorus density in silicon / M. Sasani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 22-25. — Бібліогр.: 20 назв. — англ.
1560-8034 PACS: 61.72.Tt, 66.30.Lw http://dspace.nbuv.gov.ua/handle/123456789/118109 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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