SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
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| Creator |
Boltovets, N.S.
Ivanov, V.N. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Lytvyn, O.S. Lytvyn, P.M. Vlaskina, S.I. Agueev, O.A. Svetlichny, A.I. Soloviev, S.I. Sudarshan, T.S. |
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| Description |
Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an interface TiBx(ZrBx)-SiC after rapid thermal annealing at 800°N for 60 s.
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| Date |
2017-05-28T17:42:31Z
2017-05-28T17:42:31Z 2004 |
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| Type |
Article
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| Identifier |
SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, O.S. Lytvyn, P.M. Lytvyn, S.I. Vlaskina, O.A. Agueev, A.I. Svetlichny, S.I. Soloviev, T.S. Sudarshan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS: 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/118115 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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