Diluted magnetic А₁₋xMnxВ semiconductors
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Diluted magnetic А₁₋xMnxВ semiconductors
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Creator |
Bryksa, V.P.
Tarasov, G.G. Masselink, W.T. Nolting, W. Mazur, Yu.I. Salamo, G.J. |
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Description |
Novel model of the diluted magnetic semiconductors (DMS) А₁₋xMnxВ possessing the metallic conductivity is proposed. Using the coherent potential technique the electron scattering by the randomly distributed Mn centers is taken into account. The exchange scattering of the electron spin by the localized magnetic mo exactly basing on the spin-polaron limit for the Vonsovskii Hamiltonian. |
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Date |
2017-05-28T18:57:55Z
2017-05-28T18:57:55Z 2004 |
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Type |
Article
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Identifier |
Diluted magnetic А₁₋xMnxВ semiconductors / V.Р. Bryksa, G.G. Tarasov, W.T. Masselink, W. Nolting, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 119-128. — Бібліогр.: 42 назв. — англ.
1560-8034 PACS: 72.15.Gd; 72.20.Му; 73.61.Ga http://dspace.nbuv.gov.ua/handle/123456789/118155 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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