Properties of CdTe thin films prepared by hot wall epitaxy
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Properties of CdTe thin films prepared by hot wall epitaxy
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| Creator |
Bilevych, Ye.O.
Boka, A.I. Darchuk, L.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. Boelling, O. Sulkio-Cleff, B. |
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| Description |
CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin film fabrication provided the growth rate of about 0.03 mm/min. The current-voltage characteristics and transmission spectra were measured. X-ray diffrac-tion data (XRD) measurements were carried out as well.
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| Date |
2017-05-28T19:00:33Z
2017-05-28T19:00:33Z 2004 |
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| Type |
Article
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| Identifier |
Properties of CdTe thin films prepared by hot wall epitaxy / Ye.O. Bilevych, A.I. Boka, L.O. Darchuk, J.V. Gumenjuk-Sichevska, F.F. Sizov, O. Boelling, B. Sulkio-Cleff // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 129-132. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS: 68.55Ac; 81.15.-z; 73.61.Ga; 78.66.Hf http://dspace.nbuv.gov.ua/handle/123456789/118156 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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