Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures
|
|
| Creator |
Gritsenko, M.I.
Kucheev, S.I. Lytvyn, P.M. |
|
| Description |
In this work the experimental observation of passivation of silicon surface by ultrathin dielectric film in Al/Si/nematic/Indium Tin Oxide(ITO) structure performed on the base of low resistive (~ several Ωxcm) n-type conductivity silicon sample is presented. It is shown that when the DC voltage with polarity +U on silicon is applied to the structure a passivation effect of silicon surface takes place. It is found that a silicon surface passivated by dielectric film changes an initial alignment of liquid crystal 5CB. In the structure with passivating silicon surface a frequency range of structure photosensitivity extends due to limitation of current leakage through Si/liquid crystal interface. Keywords: nematic, silicon, passivation, alignment, photosensitivity, light modulator. |
|
| Date |
2017-05-29T05:25:34Z
2017-05-29T05:25:34Z 2004 |
|
| Type |
Article
|
|
| Identifier |
Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures / M.I. Gritsenko, S.I. Kucheev, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 154-156. — Бібліогр.: 9 назв. — англ.
1560-8034 PACS: 81.65.Rv http://dspace.nbuv.gov.ua/handle/123456789/118165 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|