Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures
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| Creator |
Osinsky, V.
Dyachenko, O. |
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| Description |
In this work, we firstly investigated controlling the lattice parameter of IIIoxides used as substrates for III-nitrides heterostructures. It was shown that the atomic content change in III-sublattice gives large possibilities for precise cation controlling the lattice parameters. The developed technique is promising to make ideal substrates in IIInitride epitaxy of LED, LD and transistors with a high quantum efficiency and small noise. This technology can be realized using MBE, MOSVD or CVD chloride-hydride epitaxy with computer driving. |
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| Date |
2017-05-29T12:48:42Z
2017-05-29T12:48:42Z 2010 |
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| Type |
Article
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| Identifier |
Crystal lattice engineering the novel substrates
for III-nitride-oxide heterostructures/ V. Osinsky, O. Dyachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 142-144. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS 81.15.-z, 85.40.-e, 85.60.Jb http://dspace.nbuv.gov.ua/handle/123456789/118211 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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