Hydrogen gettering in annealed oxygen-implanted silicon
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Hydrogen gettering in annealed oxygen-implanted silicon
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| Creator |
Misiuk, A.
Barcz, A. Ulyashin, A. Antonova, I.V. Prujszczyk, M. |
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| Description |
Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was investigated after annealing of Si:O at temperatures up to 1570 K, including also processing under enhanced hydrostatic pressure, up to 1.2 GPa. Depending on processing conditions, buried layers containing SiO₂₋x clusters and/or precipitates were formed. To produce hydrogen-rich Si:O,H structures, Si:O samples were subsequently treated in RF hydrogen plasma. As determined using secondary ion mass spectrometry, hydrogen was accumulated in sub-surface region as well as within implantation-disturbed areas. It has been found that hydrogen was still present in Si:O,H structures formed by oxygen implantation with the dose D = 10⁷ cm⁻² even after post-implantation annealing up to 873 K. It is concluded that hydrogen accumulation within the disturbed areas in Si:O as well as in SOI structures can be used for recognition of defects. |
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| Date |
2017-05-29T12:56:29Z
2017-05-29T12:56:29Z 2010 |
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| Type |
Article
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| Identifier |
Hydrogen gettering in annealed oxygen-implanted silicon/ A. Misiuk, A. Barcz, A. Ulyashin, I.V. Antonova, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 161-165. — Бібліогр.: 9 назв. — англ.
1560-8034 PACS 52.40.Hf, 61.05.C-, 68.37.Ps, 82.80.Ms http://dspace.nbuv.gov.ua/handle/123456789/118217 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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