Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements
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| Creator |
Gomeniuk, Yu.V.
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| Description |
Capacitance-voltage (C-V ) and conductance-frequency ( G-ω ) techniques were modified in order to take into account the leakage current flowing through the metal-oxide-semiconductor (MOS) structure. The results of measurements of interface state densities in several high −k dielectric – silicon systems, including transition metal (Hf) and rare-earth metal (Gd, Nd) oxides, ternary compounds (LaLuO₃) and silicate (LaSiOx), are presented. It was shown that the interface state densities can be as low as ( 1.5...2) × 10¹¹ eV⁻¹cm⁻² for Al-HfO₃-Si, Pt-Gd₂O₃-Si and Pt-LaLuO₃-Si systems if the dielectric layer is deposited onto (100) silicon wafer surface. The electrically active states are attributed presumably to silicon dangling bonds at the interface between dielectric and semiconductor
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| Date |
2017-05-29T14:08:21Z
2017-05-29T14:08:21Z 2012 |
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| Type |
Article
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| Identifier |
Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements / Yu.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 1-7. — Бібліогр.: 22 назв. — англ.
1560-8034 PACS 73.20.-r http://dspace.nbuv.gov.ua/handle/123456789/118255 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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