Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters
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| Creator |
Sarikov, A.
Naseka, V. |
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| Description |
In this work, the gettering process in the multicrystalline Si wafers by the combined getter structures of the porous Si and Al layers during annealings at temperatures 600 up to 750 °C has been theoretically studied. A kinetic model based on the diffusion equation has been developed, and the characteristics of increase in the minority charge carrier diffusion length as a result of gettering annealings have been determined. The obtained results are useful for technology of multicrystalline Si solar cells to improve their properties.
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| Date |
2017-05-29T14:12:23Z
2017-05-29T14:12:23Z 2012 |
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| Type |
Article
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| Identifier |
Characteristics of gettering process in multicrystalline Si wafers with
combined porous Si/Al getters / Sarikov, V. Naseka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 8-12. — Бібліогр.: 11 назв. — англ.
1560-8034 PACS 61.72, 81.65.Tx http://dspace.nbuv.gov.ua/handle/123456789/118257 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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