Phase diagrams of Si₁-xGex solid solution: a theoretical approach
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Phase diagrams of Si₁-xGex solid solution: a theoretical approach
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| Creator |
Jivani, A.R.
Jani, A.R. |
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| Description |
In this work, we have used the pseudo-alloy atom model and higher-order perturbation theory based on pseudopotential approach to investigate phase diagram at different temperatures for Si₁–xGex solid solution system where x is the arbitrary (atomic) concentration of the second constituting element. We have also investigated the phase diagram near the melting temperature as well as at low temperatures and compared with the available experimental results. Our calculated phase diagram near the melting point agrees well with the experimental data. |
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| Date |
2017-05-29T14:31:48Z
2017-05-29T14:31:48Z 2012 |
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| Type |
Article
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| Identifier |
Phase diagrams of Si₁-xGex solid solution: a theoretical approach / A.R. Jivani, A.R. Jani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 17-20. — Бібліогр.: 14 назв. — англ.
1560-8034 PACS 64.70.kg, 64.75.Nx, 71.15.Nc, Dx http://dspace.nbuv.gov.ua/handle/123456789/118268 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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