Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe
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| Creator |
Kovalyuk, Z.D.
Duplavyy, V.Y. Sydor, O.M. |
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| Description |
n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of the heterojunction were measured, and principal mechanisms of charge transfer were established. The spectrum of relative quantum efficiency of the heterojunction was measured.
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| Date |
2017-05-29T13:57:26Z
2017-05-29T13:57:26Z 2012 |
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| Type |
Article
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| Identifier |
Investigation of InS-InSe heterojunctions
prepared using sulphurization of p-InSe / Z.D. Kovalyuk, V.Y. Duplavyy, O.M. Sydor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 38-40. — Бібліогр.: 5 назв. — англ.
1560-8034 PACS 73.40.Lq http://dspace.nbuv.gov.ua/handle/123456789/118249 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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