Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S
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| Creator |
Borschak, V.A.
Brytavskyi, Ie.V. Smyntyna, V.A. Lepikh, Ya.I. Balaban, A.P. Zatovskaya, N.P. |
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| Description |
The signal (defined by conductivity) of optical sensor based on CdS-Cu₂S heterostructure both at direct and alternative current strongly depends on barrier parameters that can change under exposure. It was stated that such parameter as resistance of space charge region considerably depends on its width at a constant barrier height, and this dependence is similar to linear shape. This behavior can indicate domination of tunnel multistep mechanisms in the studied structure, for instance, the mechanism of tunnel-jumping conductivity. |
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| Date |
2017-05-29T14:02:48Z
2017-05-29T14:02:48Z 2012 |
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| Type |
Article
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| Identifier |
Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S / V.A. Borschak, Ie.V. Brytavskyi, V.A. Smyntyna, Ya.I. Lepikh, A.P. Balaban, N.P. Zatovskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 41-43. — Бібліогр.: 5 назв. — англ.
1560-8034 PACS 73.40.Gk, Lq; 73.61.Ga http://dspace.nbuv.gov.ua/handle/123456789/118251 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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