Narrow-gap piezoelectric heterostructure as IR detector
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Narrow-gap piezoelectric heterostructure as IR detector
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| Creator |
Sizov, F.F.
Smirnov, A.B. Savkina, R.K. Deriglazov, V.A. Yakushev, M.V. |
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| Description |
Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The photoresponse, infrared transmittance spectra, parameters of the charge carrier transport, and mechanical properties were studied. Mechanical stresses at the layer-substrate interface were analyzed. HgCdTe-based infrared device is considered, operating in the middle (3–5 μm) infrared spectral range without cryogenic cooling to achieve performance level D* = 2.6 ⋅ 10⁹ ⋅ W⁻¹ cm ⋅Hz¹/² The possibility to detect infrared radiation is thought to be based on the possibility of the spatial separation of the non-equilibrium carriers in the strained semiconductor heterostructure with piezoelectric properties. |
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| Date |
2017-05-29T14:42:51Z
2017-05-29T14:42:51Z 2012 |
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| Type |
Article
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| Identifier |
Narrow-gap piezoelectric heterostructure as IR detector / F.F. Sizov, A.B. Smirnov, R.K. Savkina, V.A. Deriglazov, M.V. Yakushev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 65-71. — Бібліогр.: 21 назв. — англ.
1560-8034 PACS 72.40.+w, 77.65.Ly, 81.05.Dz http://dspace.nbuv.gov.ua/handle/123456789/118277 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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