Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K
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| Creator |
Ermakov, V.M.
Kolomoets, V.V. Panasyuk, L.I. Nazarchuk, P.F. Yashchynskiy, L.V. |
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| Description |
The change in mobility with increasing the temperature which may be due to the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions are not completely removed from valleys located in the plane (100). In this case, there is no change in the slope of the dependence logρ vs. logT for the temperature range 300 to 450 K. So, no contribution of g-transitions to intervalley scattering occurs, while the observed is tha decisive role of f–transitions to this scattering. |
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| Date |
2017-05-29T14:43:53Z
2017-05-29T14:43:53Z 2012 |
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| Type |
Article
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| Identifier |
Contribution of f- and g- transitions to electron intervalley scattering
of n-S at temperatures 300 to 450 K / V.M. Ermakov, V.V. Kolomoets, L.I. Panasyuk , P.F Nazarchuk, L.V. Yashchynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 77-79. — Бібліогр.: 3 назв. — англ.
1560-8034 PACS 72.20.Dp http://dspace.nbuv.gov.ua/handle/123456789/118279 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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