Zero bias terahertz and subterahertz detector operating at room temperature
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Zero bias terahertz and subterahertz detector operating at room temperature
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| Creator |
Momot, N.
Zabudsky, V. Tsybrii, Z. Apats’ka, M. Smoliy, M. Dmytruk, N. |
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| Description |
In this paper, the experimental study of the terahertz and subterahertz hot electron bolometer based on narrow-gap semiconductor compound Hg₁₋xCdxTe is presented. The measurements were performed in the temperature range from 77 to 300 K at various operating mode and frequency. The estimated value of the noise equivalent power at room temperature for detector proposed was 1.3·10⁻⁸ W/Hz¹/² and 5.4·10⁻⁹ W/Hz¹/² at bias current I = 1 mA and I = 0, respectively. |
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| Date |
2017-05-29T13:15:32Z
2017-05-29T13:15:32Z 2010 |
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| Type |
Article
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| Identifier |
Zero bias terahertz and subterahertz detector operating/ N. Momot, V. Zabudsky, Z. Tsybrii, M. Apats'ka, M. Smoliy, N. Dmytruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 166-169. — Бібліогр.: 11 назв. — англ.
at room temperature
1560-8034 PACS 07.57.Kp, 72.20.Ht http://dspace.nbuv.gov.ua/handle/123456789/118225 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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