Efficiency a-Si:H solar cell. Detailed theory
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Efficiency a-Si:H solar cell. Detailed theory
|
|
| Creator |
Kryuchenko, Yu.V.
Sachenko, A.V. Bobyl, A.V. Kostylyov, V.P. Romanets, P.N. Sokolovskyi, I.O. Shkrebti, A.I. Terukov, E.I. |
|
| Description |
We develop a detailed formalism to photoconversion efficiency η of hydrogenated amorphous silicon ( a-Si:H ) based solar cells with a contact grid. This efficient three-dimensional model allows firstly optimization of the p i n sandwich in terms of carrier mobilities, thickness of the layers, doping levels and others. Secondly, geometry of the grid fingers that conduct the photocurrent to the bus bars and ITO/SiO₂ layers has been optimized, and the effect of non-zero sun beam incidence angles has been included as well. The model allows optimization of the amorphous Si based solar cells in a wide range of key parameters.
|
|
| Date |
2017-05-29T14:56:06Z
2017-05-29T14:56:06Z 2012 |
|
| Type |
Article
|
|
| Identifier |
Efficiency a-Si:H solar cell. Detailed theory / Yu.V. Kryuchenko, A.V. Sachenko, A.V. Bobyl, V.P. Kostylyov, P.N. Romanets, I.O. Sokolovskyi, A.I. Shkrebtii, E.I. Terukov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 91-116. — Бібліогр.: 21 назв. — англ.
1560-8034 PACS 72.20.Jv, 73.40.Cg, 84.60.Jt, 85.30.De http://dspace.nbuv.gov.ua/handle/123456789/118286 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|