Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
|
|
| Creator |
Sorokin, V.M.
Konakova, R.V. Kudryk, Ya.Ya. Zinovchuk, A.V. Bigun, R.I. Kudryk, R.Ya. Shynkarenko, V.V. |
|
| Description |
We present a setup and procedure of studying p-n junction to case thermal resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The contributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slug and LED chip are separated. |
|
| Date |
2017-05-29T16:34:47Z
2017-05-29T16:34:47Z 2012 |
|
| Type |
Article
|
|
| Identifier |
Technique and setup for diagnostics of p-n junction
to case thermal resistance in high-power gallium nitride LEDs / V.M. Sorokin, R.V. Konakova, Ya.Ya. Kudryk, A.V. Zinovchuk, R.I. Bigun, R.Ya. Kudryk, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 124-128. — Бібліогр.: 11 назв. — англ.
1560-8034 PACS 66.70.Df, 85.60.Jb http://dspace.nbuv.gov.ua/handle/123456789/118301 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|