Current transport mechanisms in metal – high-k dielectric – silicon structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Current transport mechanisms in metal – high-k dielectric – silicon structures
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| Creator |
Gomeniuk, Y.V.
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| Description |
The mechanism of current transport in several high k -dielectric, including rare earth metal oxides (Gd₂O₃, Nd₂O₃), ternary compounds (LaLuO₃) and rare earth metal silicate (LaSiOx) thin films on silicon was studied using current-voltage ( I - V ) and conductance-frequency measurements at temperatures 100-300 K. It was shown that the current through the dielectric layer is controlled either by Pool-Frenkel mechanism of trap-assisted tunneling or by Mott’s variable range hopping conductance through the localized states near the Fermi level. From the results of measurements, the dynamic dielectric constant k of the material, energy positions and bulk concentrations of traps inside the dielectric layers were determined. |
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| Date |
2017-05-29T14:47:49Z
2017-05-29T14:47:49Z 2012 |
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| Type |
Article
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| Identifier |
Current transport mechanisms in metal – high-k
dielectric – silicon structures / Y.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 139-146. — Бібліогр.: 35 назв. — англ.
1560-8034 PACS 73.20.-r http://dspace.nbuv.gov.ua/handle/123456789/118283 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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