Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of pressure on the properties of Al-SiO₂-n-Si structures
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| Creator |
Vlasov, S.I.
Ovsyannikov, A.V. Ismailov, B.K. Kuchkarov, B.H. |
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| Description |
We investigated the effect of hydrostatic pressure on relaxation characteristics of the three-layer Al-SiO₂-n-Si structures. It was found that 20 min exposure to a pressure of 8 kbars results in reduction of the integral density of surface states, while exerting no influence on the generation centers in the bulk. |
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| Date |
2017-05-29T16:39:22Z
2017-05-29T16:39:22Z 2012 |
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| Type |
Article
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| Identifier |
Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures / S.I. Vlasov, A.V. Ovsyannikov, B.K. Ismailov, B.H. Kuchkarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 166-169. — Бібліогр.: 15Х назв. — англ.
1560-8034 PACS 73.40.Rw http://dspace.nbuv.gov.ua/handle/123456789/118305 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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