Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction
|
|
| Creator |
Smirnov, A. B.
|
|
| Description |
Narrow-gap mercury cadmium telluride thin films grown by MBE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs) were investigated as a piezoelectric heterostructure for IR detection. Mechanical stresses at the layer-substrate interface were analyzed. It was determined that for [310] oriented MCT-based structures under the anisotropic restriction of the deformation the nonzero shear components of the strain tensor arise and stress induced piezoelectric polarization is generated. Existence of the built-in electric field in the strained MCT-based heterostructure results in the spatial separation of the nonequilibrium carriers and the possibility of the room temperature detection of the IR radiation is realized. |
|
| Date |
2017-05-29T16:41:56Z
2017-05-29T16:41:56Z 2012 |
|
| Type |
Article
|
|
| Identifier |
Residual stresses and piezoelectric properties of the HgCdTe –
based compound heterostructures under the anisotropic
deformation restriction/ A. B. Smirnov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 170-175. — Бібліогр.: 22 назв. — англ.
1560-8034 PACS 72.40.+w, 77.65.Ly, 81.05.Dz http://dspace.nbuv.gov.ua/handle/123456789/118306 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|