Graded-gap AlInN Gunn diodes
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Graded-gap AlInN Gunn diodes
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| Creator |
Storozhenko, I.P.
Yaroshenko, A.N. Kaydash, M.V. |
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| Description |
The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN. We have obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered. Cutoff frequency and minimum length of the active region have been estimated. Performances of graded-gap AlInN diodes are compared with the performances of InN and AlN diodes |
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| Date |
2017-05-29T14:52:38Z
2017-05-29T14:52:38Z 2012 |
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| Type |
Article
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| Identifier |
Graded-gap AlInN Gunn diodes / I.P. Storozhenko, A.N. Yaroshenko, M.V. Kaydash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 176-180. — Бібліогр.: 16 назв. — англ.
1560-8034 PACS 61.72.uj, 73.40.Lq, 85.30.Fg http://dspace.nbuv.gov.ua/handle/123456789/118284 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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