Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure
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Creator |
Grushko, E.V.
Maslyanchuk, O.L. Mathew, X. Motushchuk, V.V. Kosyachenko, L.A. Streltsov, E.A. |
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Description |
A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The theoretical model of the photocurrent spectra for an Au/CdTe Schottky diode based on the continuity equation and incorporating the surface recombination losses does not explain the measured spectra in the entire range of wavelengths, particularly the abovementioned decay in the short-wavelength region. The satisfactory description of the measured spectra is achieved by proposing a model, in which the surface recombination along with the Schottky effect resulted in the presence of a dead layer in the space-charge region is taken into account. By varying the parameters such as uncompensated carrier concentration and carrier lifetime, the above model can explain the actual photoresponse spectra. |
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Date |
2017-05-29T19:37:49Z
2017-05-29T19:37:49Z 2007 |
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Type |
Article
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Identifier |
Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure / E.V. Grushko, O.L. Maslyanchuk, X. Mathew, V.V. Motushchuk, L.A. Kosyachenko, E.A. Streltsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 15-20. — Бібліогр.: 10 назв. — англ.
1560-8034 PACS 84.60.Jt http://dspace.nbuv.gov.ua/handle/123456789/118343 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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