Запис Детальніше

Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure

Vernadsky National Library of Ukraine

Переглянути архів Інформація
 
 
Поле Співвідношення
 
Title Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure
 
Creator Grushko, E.V.
Maslyanchuk, O.L.
Mathew, X.
Motushchuk, V.V.
Kosyachenko, L.A.
Streltsov, E.A.
 
Description A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of
a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The
theoretical model of the photocurrent spectra for an Au/CdTe Schottky diode based on
the continuity equation and incorporating the surface recombination losses does not
explain the measured spectra in the entire range of wavelengths, particularly the abovementioned
decay in the short-wavelength region. The satisfactory description of the
measured spectra is achieved by proposing a model, in which the surface recombination
along with the Schottky effect resulted in the presence of a dead layer in the space-charge
region is taken into account. By varying the parameters such as uncompensated carrier
concentration and carrier lifetime, the above model can explain the actual photoresponse
spectra.
 
Date 2017-05-29T19:37:49Z
2017-05-29T19:37:49Z
2007
 
Type Article
 
Identifier Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure / E.V. Grushko, O.L. Maslyanchuk, X. Mathew, V.V. Motushchuk, L.A. Kosyachenko, E.A. Streltsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 15-20. — Бібліогр.: 10 назв. — англ.
1560-8034
PACS 84.60.Jt
http://dspace.nbuv.gov.ua/handle/123456789/118343
 
Language en
 
Relation Semiconductor Physics Quantum Electronics & Optoelectronics
 
Publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України