Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
|
|
| Creator |
Shutov, S.V.
Shtan’ko, A.D. Kurak, V.V. Litvinova, M.B. |
|
| Description |
The time dependences of changes of the electrophysical, mechanical, and light emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of vacancies, interstitial point defects, and dislocations in nonstoichiometric crystals is revealed. |
|
| Date |
2017-05-29T19:39:03Z
2017-05-29T19:39:03Z 2007 |
|
| Type |
Article
|
|
| Identifier |
Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing / S.V. Shutov, A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 26-30. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS 61.72.Cc, 61.71.Ji, 71.55.Eq http://dspace.nbuv.gov.ua/handle/123456789/118345 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|