Effect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edge
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edge
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| Creator |
Dmitruk, N.L.
Borkovskaya, O.Yu. Havrylenko, T.S. Naumenko, D.O. Petrik, P. Meza-Laguna, V. Basiuk, E.V. |
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| Description |
Fullerene C₆₀ films were grown using physical vapor deposition on Si substrates at room temperature. Then chemical modification with cross-linking these films was performed using the reaction with 1,8-octanediamine (DA) or octane-1,8- dithiol (DT). These chemically cross-linked C₆₀ films are capable of stable binding the Ag or Au nanoclusters. Optical properties of the obtained nanostructured hybrid films were investigated by both reflectance spectroscopy and spectral ellipsometry within the spectral range 1.55 to 5.0 eV at various angles of incidence. From the spectral dependences of the extinction coefficient in the region of optical absorption edge, the physical nature of the fundamental allowed direct band-gap transitions between HOMOLUMO states Eg, the optical absorption edge near the intrinsic transition Eo, and exponential tail of the density-of-states caused by defects have been determined. Influence of chemical modification and decoration of metal nanoparticles on the above mentioned parameters has been analyzed. |
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| Date |
2017-05-29T13:30:42Z
2017-05-29T13:30:42Z 2010 |
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| Type |
Article
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| Identifier |
Effect of chemical modification of thin C₆₀ fullerene films
on the fundamental absorption edge / ИОФамилия // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 180-185. — Бібліогр.: 21 назв. — англ.
1560-8034 PACS 78.40.Ri http://dspace.nbuv.gov.ua/handle/123456789/118234 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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