Model of heterotransistor with quantum dots
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Model of heterotransistor with quantum dots
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| Creator |
Timofeyev, V.I.
Faleyeva, E.M. |
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| Description |
Heterostructure transistors with quantum dots (QD) are now very perspective devices because of their higher velocities of electrons in the channel. Simulation results for concentration and carrier velocity distributions depending on the QD size, concentration and location were presented in this paper. It is shown that presence of QD in the channel causes a significant increase of current. Also, QD location and concentration influence to the output characteristics of transistor was established. |
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| Date |
2017-05-29T13:19:43Z
2017-05-29T13:19:43Z 2010 |
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| Type |
Article
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| Identifier |
Model of heterotransistor with quantum dots/ V.I. Timofeyev, E.M. Faleyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 186-188. — Бібліогр.: 4 назв. — англ.
1560-8034 PACS 73.40.-c, 85.35.Be http://dspace.nbuv.gov.ua/handle/123456789/118231 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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