Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry
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| Creator |
Fodchuk, І.М.
Dovganyuk, V.V. Litvinchuk, Т.V. Kladko, V.P. Slobodian, М.V. Gudymenko, O.Yo. Swiatek, Z. |
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| Description |
Structural changes in silicon single crystals irradiated with high-energy electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve behaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocal space maps (HR-RSMs) were found as a function of the radiation dose. The generalized dynamic theory of X-ray Bragg-diffraction in crystals comprising defects of several types (spherical and disc-shaped clusters as well as dislocation loops) and a damaged nearsurface layer was used for explanation. |
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| Date |
2017-05-29T13:35:02Z
2017-05-29T13:35:02Z 2010 |
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| Type |
Article
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| Identifier |
Structural changes in Cz-Si single crystals
irradiated with high-energy electrons
from data of high-resolution X-ray diffractometry/ І.М. Fodchuk, V.V. Dovganyuk, Т.V. Litvinchuk , V.P. Kladko, М.V. Slobodian, O.Yo. Gudymenko, Z. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 209-213. — Бібліогр.: 22 назв. — англ.
1560-8034 PACS 61.10.Kw, Nz, 61.72.Dd, Ff, 68.55.Ln http://dspace.nbuv.gov.ua/handle/123456789/118237 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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