Impurity scattering of band carriers
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Impurity scattering of band carriers
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| Creator |
Boiko, I.I.
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| Description |
Mobility of band carriers scattered on donors, partially ionized, partially neutral, at low temperatures, is considered in general and calculated for AIII-BV group crystals. It is shown that temperature dependence of mobility is determined by relationship between number of ionized and neutral donors and by average energy of electrons. |
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| Date |
2017-05-29T13:36:52Z
2017-05-29T13:36:52Z 2010 |
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| Type |
Article
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| Identifier |
Impurity scattering of band carriers/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 214-220. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS 71.20. 72.20 Dp http://dspace.nbuv.gov.ua/handle/123456789/118238 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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