Запис Детальніше

Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown

Vernadsky National Library of Ukraine

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Title Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown
 
Creator Aleinikov, A.B.
Berezovets, V.A.
Borblik, V.L.
Shwarts, M.M.
Shwarts, Yu.M.
 
Description Effect of magnetic field (up to 14 T) on current-voltage characteristics of
silicon n⁺
-p diodes which manifests hysteresis loops related with low-temperature
impurity breakdown has been studied. With growth of magnetic field, the hysteresis
loops are narrowed and decreased in amplitude and then disappear, but the breakdown
continues in a soft form. Planar design of the diode has allowed separating the influence
of magnetic field on mobility of the carriers executing impact ionization of the impurities
and on the ionization energy itself. Theoretical analysis of the experimental data
permitted us to determine the dependence of the ionization energy on the magnetic field.
As in other investigated semiconductors, our results demonstrate the dependence of B¹/³
type. A model capable to explain qualitatively the mechanism of suppression of the
hysteresis loops by magnetic field is proposed as well.
 
Date 2017-05-29T18:05:18Z
2017-05-29T18:05:18Z
2012
 
Type Article
 
Identifier Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown / A.B. Aleinikov, V.A. Berezovets, V.L. Borblik, M.M. Shwarts, Yu.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 288-293. — Бібліогр.: 19 назв. — англ.
1560-8034
PACS 85.30.Kk
http://dspace.nbuv.gov.ua/handle/123456789/118325
 
Language en
 
Relation Semiconductor Physics Quantum Electronics & Optoelectronics
 
Publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України