Spin polarization in semimagnetic semiconductor two barrier spin filters
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Spin polarization in semimagnetic semiconductor two barrier spin filters
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| Creator |
Lev, S.B.
Sugakov, V.I. Vertsimakha, G.V. |
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| Description |
The spin-dependent tunneling of electrons through the CdMgTe-based twobarrier resonant tunneling system with a semimagnetic CdMnTe well is studied. The level splitting in the semimagnetic well under an external magnetic field, caused by giant Zeeman splitting, allows one to achieve a high level of spin polarization of the current flowing through the spin filter. The current polarization degree depending on different parameters of the system such as the carrier density, concentration of magnetic ions, temperature, and the strength of the external magnetic and electric fields is analyzed. |
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| Date |
2017-05-29T19:18:42Z
2017-05-29T19:18:42Z 2007 |
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| Type |
Article
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| Identifier |
Spin polarization in semimagnetic semiconductor two barrier spin filters / S. B. Lev, V. I. Sugakov, G. V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 42-46. — Бібліогр.: 20 назв. — англ.
1560-8034 PACS 72.25.-b, 73.40.Ly, 75.+a http://dspace.nbuv.gov.ua/handle/123456789/118332 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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