HgCdTe quantum wells grown by molecular beam epitaxy
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
HgCdTe quantum wells grown by molecular beam epitaxy
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| Creator |
Dvoretsky, S.A
Ikusov, D.G. Kvon, Z.D. Mikhailov, N.N. Remesnik, V.G. Smirnov, R.N. Sidorov, Yu.G. Shvets, V.A. |
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| Description |
CdxHg₁₋xTe-based (x = 0 – 0.25) quantum wells (QWs) of 8 – 22 nm in thickness were grown on (013) CdTe/ZnTe/GaAs substrates by molecular beam epitaxy. The composition and thickness (d) of wide-gap layers (spacers) were x ∼ 0.7 mol.frac. and d ∼ 35 nm, respectively, at both sides of the quantum well. The thickness and composition of epilayers during the growth were controlled by ellipsometry in situ. It was shown that the accuracy of thickness and composition were ∆x = ± 0.002, ∆d = ± 0.5 nm. The central part of spacers (10 nm thick) was doped by indium up to a carrier concentration of ∼10¹⁵ cm⁻³ . A CdTe cap layer 40 nm in thickness was grown to protect QW. The compositions of the spacer and QWs were determined by measuring the Е₁ and Е₁+∆₁ peaks in reflection spectra using layer-by-layer chemical etching. The galvanomagnetic investigations (the range of magnetic fields was 0 – 13 T) of the grown QW showed the presence of a 2D electron gas in all the samples. The 2D electron mobility µe = (2.4 – 3.5)×10⁵ cm² /(V·s) for the concentrations N = (1.5 – 3)×10¹¹ cm⁻² (x < 0.11) that confirms a high quality of the grown QWs. |
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| Date |
2017-05-29T19:19:45Z
2017-05-29T19:19:45Z 2007 |
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| Type |
Article
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| Identifier |
HgCdTe quantum wells grown by molecular beam epitaxy / S.A.Dvoretsky, D.G.Ikusov. Z.D.Kvon, N.N.Mikhailov, V.G.Remesnik, R.N.Smirnov, Yu.G.Sidorov, V.A.Shvets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 47-53. — Бібліогр.: 25 назв. — англ.
1560-8034 PACS 07.60.Fs, 73.43.-f, 75.75.+q, 78.30.Fs, 81.05.Dz, 81.15.Hi http://dspace.nbuv.gov.ua/handle/123456789/118333 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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