Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields
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| Creator |
Syngaivska, G.I.
Korotyeyev, V.V. |
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| Description |
The electron distribution function and transport characteristics of hot electrons in GaN semiconductor are calculated by the Monte Carlo method. We studied the electron transport at temperatures of 10, 77, and 300 K under low and moderate electric fields. We found that, at low temperatures and low electric fields (a few hundreds of V/cm), the second “ohmic” region is to be observed on the I-V characteristic. In this case, the mean energy is very slowly dependent on the field. The streaming effect can occur in bulk GaN with low electron concentration (<10¹⁶ cm⁻³) at low temperatures and electric fields of a few kV/cm. |
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| Date |
2017-05-29T18:58:39Z
2017-05-29T18:58:39Z 2007 |
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| Type |
Article
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| Identifier |
Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields / G.I. Syngaivska, V.V.Korotyeyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 54-59. — Бібліогр.: 16 назв. — англ.
1560-8034 PACS 02.70.Uu, 72.10.-d http://dspace.nbuv.gov.ua/handle/123456789/118329 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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