Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures
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| Creator |
Sachenko, A.V.
Sokolovskyi, I.O. Kazakevitch, A. Shkrebtii, A.I. Gaspari, F. |
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| Description |
An analytical formalism to optimize the photoconversion efficiency η of hydrogenated amorphous silicon-based (a-Si:H) solar cells has been developed. This model allows firstly the optimization of a p⁺ -i-n sandwich in terms of carrier mobilities, thickness of the layers, doping levels, and others. Second, the geometry of grid fingers that conduct the photocurrent to the bus bars and ITO/SiO₂ layers has been optimized, and the effect of non-zero incidence angles of Sun’s light has been included as well. The optimization method has been applied to typical a-Si:H solar cells. The codes allow the optimization of amorphous Si based solar cells in a wide range of parameters and are available on the e-mail request. |
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| Date |
2017-05-29T19:20:35Z
2017-05-29T19:20:35Z 2007 |
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| Type |
Article
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| Identifier |
Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures / A.V. Sachenko, I. O Sokolovskyi, A. Kazakevitch, A.I. Shkrebtii, F. Gaspari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 60-66. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS 72.20.Jv, 73.40.Cg, 84.60.Jt, 85.30.De http://dspace.nbuv.gov.ua/handle/123456789/118334 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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