Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors
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Creator |
Popovych, K.O.
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Description |
In this paper we present experimental results of the studying degradation processes in electroluminescent panels, prepared from encapsulated ZnS:Cu powder phosphors and theoretical simulation of energy parameters for the phosphor. Energy band diagrams ZnS, Cu₂S, ZnS-Cu₂₋xS heterojunction and Cu-ZnS metal-semiconductor junction have been constructed and cohesive energies for Zn-S, Cu-S, Zn-O, Cu-O and Zn-Cu bonds have been calculated by the method based on a linear combination of atomic orbitals and pseudo-potential. Time dependences of brightness have been found to adequately fit a two-component exponential dependence. The first part of the exponential curve has been attributed to the diffusion processes taking place in Cu₂₋xS, and the second one to the diffusion of Cu in ZnS matrix. |
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Date |
2017-05-29T19:24:53Z
2017-05-29T19:24:53Z 2007 |
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Type |
Article
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Identifier |
Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors / K.O. Popovych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 77-80. — Бібліогр.: 12 назв. — англ.
1560-8034 PACS 78.60.Fi, 71.15.Fv, 71.55.Gs http://dspace.nbuv.gov.ua/handle/123456789/118337 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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