Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates
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| Creator |
Makhniy, V.P.
Slyotov, М.М. Tkachenko, I.V. Slyotov, А.М. |
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| Description |
Using the isovalent substitution method, CdSe heterolayers of cubic modification were obtained for the first time on single-crystal CdTe substrates, and their basic physical properties were studied. |
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| Date |
2017-05-31T05:13:52Z
2017-05-31T05:13:52Z 2012 |
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| Type |
Article
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| Identifier |
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / V.P. Makhniy, М.М. Slyotov, I.V. Tkachenko, А.М. Slyotov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 338-339. — Бібліогр.: 6 назв. — англ.
1560-8034 PACS 78.66.-w http://dspace.nbuv.gov.ua/handle/123456789/118719 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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