Photoluminescence studies of CdTe polycrystalline films
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photoluminescence studies of CdTe polycrystalline films
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| Creator |
Tetyorkin, V.V.
Sukach, A.V. Stariy, S.V. Boiko, V.A. |
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| Description |
Photoluminescence (PL) studies of CdTe polycrystalline films are reported. The films were grown using the modified close space sublimation technique on sapphire substrates. The mean grain size in the investigated films was ranged from 10 up to 360 μm. The distinct spectral bands around 1.580 and 1.440 eV were observed at 77 K. These bands are attributed to shallow bound excitons at dislocations and deep defects, respectively. The intensity of luminescence related to dislocation defects is found to be proportional to the density of grain boundaries. The nature of grain boundaries in the investigated films has been briefly discussed. |
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| Date |
2017-05-31T05:18:38Z
2017-05-31T05:18:38Z 2012 |
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| Type |
Article
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| Identifier |
Photoluminescence studies of CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, S.V. Stariy and V.A. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 40-44. — Бібліогр.: 28 назв. — англ.
1560-8034 PACS 78.55.E http://dspace.nbuv.gov.ua/handle/123456789/118723 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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